1.PANDA 3.0 modules use the industry's cutting-edge n-type monocrystalline TOPCon cell technology. With high quality,encapsulation materials and classic glass-backsheet structure, PANDA 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance. 2.Excellent power yield The large-size battery design effectively enhances the output power of the module. At the same time, it combines excellent temperature coefficient, excellent low-light performance and outstanding anti-LID/LeTID attenuation technology. The module can sustainably generate more power once used. 3.High Reliability The large size cell enhances the module’s power output, with the excel-lent temperature coefficient, superior low light performance and com-prehensive LID/LeTID degradation suppression technology, allows the module to generate more energy yield once in use.The modules meet IEC standard testing requirements and are resistant to salt mist, ammonia, dust and sand, snail trail and PID risks.The glass-backsheet structure, special material selection and extra-strong frames effectively enhance the mechanical performance of the modules, their compatibility with mainstream trackers and inverters, and their adaptability to harsh environments.The multi-busbar design effectively reduces the impact of micro-cracks and broken busbars, and the half-cell structure effectively reduces the impact of shadow shading. 4.Ultra-low LID Attenuation in the first year: 1%, annual attenuation: 0.4%.Ultra-low LID batteries also use anti-PID (Potential Induced Degradation) batteries and packaging materials to reduce battery attenuation. Anti-PID battery and packaging materials can effectively resist potential-induced degradation (PID) that the battery may suffer during use, thereby further extending the service life of the battery.

Product number	405	410	415	420	425	430
quality assurance
product quality assurance	12 years
Power Output Guaranteed	Degrades 0.55% per year for 25 years
Electrical performance parameters (STC)
Peak Power (Pmax)	405 Wp	410 Wp	415 Wp	420 Wp	425 Wp	430 Wp
Peak operating voltage (Vmpp)	30.93 V	31.12 V	31.31 V	31.50 V	31.69 V	31.88 V
Peak operating current (Impp)	13.10 A	13.18 A	13.26 A	13.34 A	13.42 A	13.49 A
Open circuit voltage (Voc)	37.53 V	37.72 V	37.91 V	38.10 V	38.29 V	38.48 V
Short circuit current (Isc)	13.84 A	13.92 A	14.00 A	14.08 A	14.16 A	14.24 A
Component efficiency	20.74%	21.00%	21.25%	21.51%	21.76%	22.02%
Power deviation (positive)	1.50%	1.50%	1.50%	1.50%	1.50%	1.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax)	307.61 Wp	311.30 Wp	315.20 Wp	319.02 Wp	322.87 Wp	326.50 Wp
Peak operating voltage (Vmpp)	29.45 V	29.63 V	29.81 V	30.00 V	30.18 V	30.36 V
Peak operating current (Impp)	10.44 A	10.51 A	10.57 A	10.64 A	10.70 A	10.76 A
Open circuit voltage (Voc)	35.58 V	35.76 V	35.94 V	36.12 V	36.30 V	36.48 V
Short circuit current (Isc)	11.16 A	11.22 A	11.29 A	11.35 A	11.42 A	11.48 A
maximum durable temperature	42±2 °C
temperature characteristics
Operating temperature	-40~85 °C
Temperature coefficient (Pmax)	#NAME?
Temperature Coefficient (Voc)	#NAME?
Temperature Coefficient (Isc)	0.046 %/°C
System Integration Parameters
system voltage	1000 V
Fuse rated current	25 A
physical parameters
Component size (height/width/thickness)	1722x1134x30 mm
weight	21.5 kg
Cell type	Monocrystalline silicon
Cell specification	156.75×156.75 mm
Cell Quantity	108
glass type	Tempering
glass thickness	3.2 mm
border type	Anodized aluminum alloy
Junction box protection class	IP 68
connector type	MC4
Cable cross section	4 mm2
cable length	1200 mm