1.The module also uses a classic glass back panel structure. The glass backplane has high light transmittance and impact resistance, and can effectively protect the circuit inside the component from the external environment. At the same time, the heat dissipation performance of the glass backplane is also better, which helps to improve the working efficiency and service life of the components. 2.Maximum Power up to 415W+ The maximum power is the maximum power that the module can continuously output under specific conditions (such as 100% load), while the maximum output power is the maximum power that the module can continuously output under various working conditions. Therefore, when selecting a module, these two indicators need to be considered comprehensively to ensure that it can meet the needs of actual applications. 3.High Reliability In terms of structural design, this component adopts a glass back panel structure, special materials are selected, and the frame is very strong. These designs have effectively improved the mechanical performance of the module, making it more stable and reliable. At the same time, the multi-busbar design of the module also helps reduce the risk of micro-cracks and broken busbars, further improving the stability and reliability of the module. The half-chip structure design can effectively reduce the adaptability of the inverter in harsh environments. 4.Ultra-low LID Attenuation in the first year: 1%, annual attenuation: 0.55%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.

Product number	390	395	400	405	410	415
quality assurance
product quality assurance	12 years
Power Output Guaranteed	Degrades 0.55% per year for 25 years
Electrical performance parameters (STC)
Peak Power (Pmax)	390 Wp	395 Wp	400 Wp	405 Wp	410 Wp	415 Wp
Peak operating voltage (Vmpp)	30.27 V	30.42 V	30.56 V	30.74 V	30.86 V	31.00 V
Peak operating current (Impp)	12.89 A	12.99 A	13.09 A	13.19 A	13.29 A	13.39 A
Open circuit voltage (Voc)	36.80 V	36.90 V	37.00 V	37.10 V	37.20 V	37.30 V
Short circuit current (Isc)	13.68 A	13.77 A	13.86 A	13.95 A	14.04 A	14.13 A
Component efficiency	19.97%	20.23%	20.48%	20.74%	21.00%	21.25%
Power deviation (positive)	1.50%	1.50%	1.50%	1.50%	1.50%	1.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax)	296.85 Wp	300.63 Wp	304.34 Wp	308.17 Wp	312.03 Wp	315.80 Wp
Peak operating voltage (Vmpp)	28.87 V	29.01 V	29.14 V	29.29 V	29.43 V	29.56 V
Peak operating current (Impp)	10.28 A	10.36 A	10.44 A	10.52 A	10.60 A	10.68 A
Open circuit voltage (Voc)	34.98 V	35.08 V	35.17 V	35.27 V	35.36 V	35.46 V
Short circuit current (Isc)	11.02 A	11.09 A	11.17 A	11.24 A	11.31 A	11.38 A
maximum durable temperature	39±2 °C
temperature characteristics
Operating temperature	-40~85 °C
Temperature coefficient (Pmax)	.-0.35 %/°C
Temperature Coefficient (Voc)	.-0.28 %/°C
Temperature Coefficient (Isc)	0.05 %/°C
System Integration Parameters
system voltage	1000 VDC / 1500 VDC
Fuse rated current	25 A
physical parameters
Component size (height/width/thickness)	1722x1134x30 mm
weight	24.8 kg
Cell type	Monocrystalline silicon
Cell specification	108×108 mm
Cell Quantity	108
glass type	Tempering
glass thickness	3.2 mm
border type	Anodized aluminum alloy
Junction box protection class	IP 68
connector type	MC4
Cable cross section	4 mm2
cable length	1200 mm