YINGLI YLM-J 3.0 PLUS 645-670W YL670D-45f 1/2

Get high-efficiency solar panels with YINGLI YLM-J 3.0 PLUS 645-670W YL670D-45f 1/2. As a factory, we offer premium quality and reliable energy solutions.

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  • YINGLI YLM-J 3.0 PLUS 645-670W YL670D-45f 1/2

PRODUCTS DETAILS

1.YLM 3.0 modules use high efficiency p-type monocrystalline PERC cell technology. With high quality encapsulation materials and classic glass-backsheet structure, YLM 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance.
2.Maximum Power up to 670W+
Module max output power up to 670W+
3.High Reliability
The large size cell enhances the module’s power output, while the ex-cellent temperature coefficient and comprehensive LID/LeTID degrada-tion suppression technology allow the module to generate more energy yield once in use.The modules meet IEC standard testing requirements and are resistant to salt mist, ammonia, dust and sand, snail trail and PID risks.The glass-backsheet structure, special material selection and ex-tra-strong frames effectively enhance the mechanical performance of the modules, their compatibility with mainstream trackers and invert-ers, and their adaptability to harsh environments.The multi-busbar design effectively reduces the impact of micro-cracks and broken busbars, and the half-cell structure effectively reduces the impact of shadow shading.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.55%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.

Product number 645 650 655 660 665 670
quality assurance
product quality assurance 12 years
Power Output Guaranteed Degrades 0.55% per year for 25 years
Electrical performance parameters (STC)
Peak Power (Pmax) 645 Wp 650 Wp 655 Wp 660 Wp 665 Wp 670 Wp
Peak operating voltage (Vmpp) 37.50 V 37.70 V 37.90 V 38.10 V 38.30 V 38.50 V
Peak operating current (Impp) 17.20 A 17.24 A 17.29 A 17.33 A 17.37 A 17.41 A
Open circuit voltage (Voc) 45.10 V 45.30 V 45.50 V 45.70 V 45.90 V 46.10V
Short circuit current (Isc) 18.26 A 18.31 A 18.36 A 18.42 A 18.48 A 18.54 A
Component efficiency 20.76% 20.92% 21.09% 21.25% 21.41% 21.57%
Power deviation (positive) 1.50% 1.50% 1.50% 1.50% 1.50% 1.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax) 484.42 Wp 488.18 Wp 491.93 Wp 495.69 Wp 499.44 Wp 503.20 Wp
Peak operating voltage (Vmpp) 35.21 V 35.40 V 35.56 V 35.75 V 35.94 V 36.13 V
Peak operating current (Impp) 13.76 A 13.79 A 13.83 A 13.86 A 13.90 A 13.93 A
Open circuit voltage (Voc) 42.64 V 42.83 V 43.02 V 43.21 V 43.40 V 43.59 V
Short circuit current (Isc) 14.71 A 14.75 A 14.79 A 14.84 A 14.89 A 14.94 A
maximum durable temperature 43±2 °C
temperature characteristics
Operating temperature -40~85 °C
Temperature coefficient (Pmax) .-0.34 %/°C
Temperature Coefficient (Voc) .-0.25 %/°C
Temperature Coefficient (Isc) 0.04 %/°C
System Integration Parameters
system voltage 1000 VDC / 1500 VDC
Fuse rated current 30 A
physical parameters
Component size (height/width/thickness) 2384x1303x35 mm
weight 34 kg
Cell type Monocrystalline silicon
Cell specification 132×132 mm
Cell Quantity 132
glass type Tempering
glass thickness 3.2 mm
border type Anodized aluminum alloy
Junction box protection class IP 68
connector type MC4
Cable cross section 4 mm2
cable length 1200 mm

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